TIU Physical basis Electronics Lab 6

Affiliates: 0,07 $ — how to earn
Pay with:
i agree with "Terms for Customers"
Sold: 0
Refunds: 0

Uploaded: 06.07.2016
Content: Лабораторная работа № 6.docx (2630,84 kB)

Description

Tyumen Industrial University
Department of Electricity and Electronics
Laboratory work on discipline: "Physical fundamentals of electronics"
Laboratory work № 6 study with a control FET p-n-transition

1. Objective
The study of the structure, operation principle, basic static current-voltage characteristics and field effect transistors parameters.

3. Targets and performance of laboratory work
3.1. Explore family of drain-gate FET and runoff characteristics of a control p-n-transition in the circuit with common source.
To investigate the family PT CVC can be used in the scheme
Fig. 6.7.
 
Fig. 6.7. Study Design family CVC PT to the control
p-n-transition
The circuit comprises a voltage source between the gate and the source U2, analyzed the VT transistor, power supply V1, voltmeters Ud, Uq to control voltage and ammeter to measure current Ic flows. Stock characteristics are taken at fixed values ​​Uq by changing the voltage Ud and measuring the drain current ІS.
The measurement results are recorded in the appropriate table (Table 6.1;. 6.2) and construct graphs Stock gate and the drain of the transistor characteristics. According to the type of characteristics to identify the type of channel.
Переводчик Google для бизнеса –Инструменты переводчика

Feedback

0
No feedback yet.
Period
1 month 3 months 12 months
0 0 0
0 0 0
In order to counter copyright infringement and property rights, we ask you to immediately inform us at support@plati.com the fact of such violations and to provide us with reliable information confirming your copyrights or rights of ownership. Email must contain your contact information (name, phone number, etc.)