TIU Physical basis Electronics Lab 6

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TIU Physical basis Electronics Lab 6 TIU Physical basis Electronics Lab 6 TIU Physical basis Electronics Lab 6

Tyumen Industrial University
Department of Electricity and Electronics
Laboratory work on discipline: "Physical fundamentals of electronics"
Laboratory work № 6 study with a control FET p-n-transition

1. Objective
The study of the structure, operation principle, basic static current-voltage characteristics and field effect transistors parameters.

3. Targets and performance of laboratory work
3.1. Explore family of drain-gate FET and runoff characteristics of a control p-n-transition in the circuit with common source.
To investigate the family PT CVC can be used in the scheme
Fig. 6.7.
Fig. 6.7. Study Design family CVC PT to the control
The circuit comprises a voltage source between the gate and the source U2, analyzed the VT transistor, power supply V1, voltmeters Ud, Uq to control voltage and ammeter to measure current Ic flows. Stock characteristics are taken at fixed values ​​Uq by changing the voltage Ud and measuring the drain current ІS.
The measurement results are recorded in the appropriate table (Table 6.1;. 6.2) and construct graphs Stock gate and the drain of the transistor characteristics. According to the type of characteristics to identify the type of channel.
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